| Mfg Part Number: MD102D20100S | Manufacturer: Raytheon Systems Ltd | NSN : 5962-01-228-0135 |
| NIIN : 012280135 | Item Name : Microcircuit Memory | CAGE Code : K0268 |
| FSC : 5962 Microcircuits Electronic |
Thank you for taking an interest in the various military NSN parts and aerospace parts we offer on our website. You have currently taken interest in part number MD102D20100S, a Raytheon Systems Ltd item produced under CAGE Code K0268. For further identification purposes, part number MD102D20100S is also listed with the NSN 5962012280135, and it is organized under Federal Supply Class (FSC) 5962 Microcircuits Electronic for ease of procural. By filling out and submitting the form provided below, you will be able to receive purchasing options on this item directly from our staff. For us to best tailor our presented solution to your unique needs and restrictions alike, we ask that you please offer our team details like your desired quantity, target pricing, and expected fulfillment timeframe. We can even accommodate many time constraints and limitations that customers may face, so be sure to let us know of any requests when you submit an RFQ form for part number MD102D20100S.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-228-0135 Item Description: Microcircuit Memory | 5962 | 012280135 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Md102d20100s | 3 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH2 030 INCHES MINIMUM AND 2 080 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 515 INCHES MINIMUM AND 0 600 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 5 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHIGH PERFORMANCE AND WENABLE AND WRESET AND HERMETICALLY SEALED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN35 INPUT |
| MEMORY | CRHL | BIT QUANTITY2048 |
| MEMORY | CSWJ | WORD QUANTITY256 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
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