Mfg Part Number: AM8155DI | Manufacturer: Micro Power Systems Inc | NSN : 5962-01-188-7173 |
NIIN : 011887173 | Item Name : Microcircuit Memory | CAGE Code : 54186 |
FSC : 5962 Microcircuits Electronic |
Thank you for taking an interest in the various military NSN parts and aerospace parts we offer on our website. You have currently taken interest in part number AM8155DI, a Micro Power Systems Inc item produced under CAGE Code 54186. For further identification purposes, part number AM8155DI is also listed with the NSN 5962011887173, and it is organized under Federal Supply Class (FSC) 5962 Microcircuits Electronic for ease of procural. By filling out and submitting the form provided below, you will be able to receive purchasing options on this item directly from our staff. For us to best tailor our presented solution to your unique needs and restrictions alike, we ask that you please offer our team details like your desired quantity, target pricing, and expected fulfillment timeframe. We can even accommodate many time constraints and limitations that customers may face, so be sure to let us know of any requests when you submit an RFQ form for part number AM8155DI.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-188-7173 Item Description: Microcircuit Memory | 5962 | 011887173 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Am8155di | 3 | 8 | E |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH50 2 MILLIMETERS MINIMUM AND 51 3 MILLIMETERS MAXIMUM |
MEMORY | ADAT | BODY WIDTH14 8 MILLIMETERS MINIMUM AND 15 6 MILLIMETERS MAXIMUM |
MEMORY | ADAU | BODY HEIGHT2 0 MILLIMETERS MINIMUM AND 2 6 MILLIMETERS MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 5 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATION5820-01-145-4902 MODEMCABLE DRI |
MEMORY | CBBL | FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND STATIC OPERATION AND ELECTROSTATIC SENSITIVE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN37 INPUT |
MEMORY | CRHL | BIT QUANTITY2048 |
MEMORY | CSWJ | WORD QUANTITY256 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS NOMINAL POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 400 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
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