Mfg Part Number: MC8155 B | Alternate P/N: MC8155B | Manufacturer: Intel Corporation |
NSN : 5962-01-159-3566 | NIIN : 011593566 | Item Name : Microcircuit Memory |
CAGE Code : 34649 | FSC : 5962 Microcircuits Electronic |
Thank you for taking an interest in the various military NSN parts and aerospace parts we offer on our website. You have currently taken interest in part number MC8155 B, a Intel Corporation item produced under CAGE Code 34649. For further identification purposes, part number MC8155 B is also listed with the NSN 5962011593566, and it is organized under Federal Supply Class (FSC) 5962 Microcircuits Electronic for ease of procural. By filling out and submitting the form provided below, you will be able to receive purchasing options on this item directly from our staff. For us to best tailor our presented solution to your unique needs and restrictions alike, we ask that you please offer our team details like your desired quantity, target pricing, and expected fulfillment timeframe. We can even accommodate many time constraints and limitations that customers may face, so be sure to let us know of any requests when you submit an RFQ form for part number MC8155 B.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-159-3566 Item Description: Microcircuit Memory | 5962 | 011593566 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Mc8155 B | 3 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH2 096 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 510 INCHES MINIMUM AND 0 520 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 160 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 5 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND STATIC OPERATION |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN37 INPUT |
MEMORY | CRHL | BIT QUANTITY2048 |
MEMORY | CSWJ | WORD QUANTITY256 |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-5 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT05869-725004-197 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
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