| Mfg Part Number: MT5C1008C-20L883C | Alternate P/N: MT5C1008C20L883C | Manufacturer: Cypress Semiconductor Corporatio |
| NSN : 5962-01-424-3336 | NIIN : 014243336 | Item Name : Microcircuit Memory |
| CAGE Code : 65786 | FSC : 5962 Microcircuits Electronic |
Thank you for taking an interest in the various military NSN parts and aerospace parts we offer on our website. You have currently taken interest in part number MT5C1008C-20L883C, a Cypress Semiconductor Corporatio item produced under CAGE Code 65786. For further identification purposes, part number MT5C1008C-20L883C is also listed with the NSN 5962014243336, and it is organized under Federal Supply Class (FSC) 5962 Microcircuits Electronic for ease of procural. By filling out and submitting the form provided below, you will be able to receive purchasing options on this item directly from our staff. For us to best tailor our presented solution to your unique needs and restrictions alike, we ask that you please offer our team details like your desired quantity, target pricing, and expected fulfillment timeframe. We can even accommodate many time constraints and limitations that customers may face, so be sure to let us know of any requests when you submit an RFQ form for part number MT5C1008C-20L883C.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-424-3336 Item Description: Microcircuit Memory | 5962 | 014243336 | 0 | N | D | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | D | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Mt5c1008c-20l883c | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.700 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.350 INCHES MINIMUM AND 0.405 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.232 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER AND BURN IN, MIL-STD-883, CLASS B |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS NOMINAL ACCESS |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | DUAL CE |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PRINTED CIRCUIT |
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